Engineering colloidal quantum dot solids within and beyond the mobility-invariant regime.
作者： David Zhitomirsky , Oleksandr Voznyy , Larissa Levina , Sjoerd Hoogland , Kyle W. Kemp
DOI: 10.1038/NCOMMS4803
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摘要: Colloidal quantum dots are attractive materials for efficient, low-cost and facile implementation of solution-processed optoelectronic devices. Despite impressive mobilities (1-30 cm2 V(-1) s(-1)) reported new classes dot solids, it is--surprisingly--the much lower-mobility (10(-3)-10(-2) cm2 V(-1) s(-1)) solids that have produced the best photovoltaic performance. Here we show is not mobility, but instead average spacing among recombination centres governs diffusion length charges in today's solids. In this regime, colloidal films do benefit from further improvements charge carrier mobility. We develop a device model accurately predicts thickness dependence Direct measurements suggest solid-state ligand exchange procedure as potential origin detrimental centres. then present novel avenue in-solution passivation with tightly bound chlorothiols retain solution to film, achieving an 8.5% power conversion efficiency.
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