Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

摘要: Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy controlled doping under equilibrium conditions. Exposing lead selenide thin films to solutions containing varying proportions decamethylferrocene and decamethylferrocenium incrementally reversibly increased carrier concentration solid 2 orders magnitude from native values. This application redox buffers provides new method majority porous semiconductor films.