Photoemission and band‐structure studies of the GaAs(110) surface

摘要: We have studied the electronic and geometrical structure of cleaved GaAs(110) surface, using experimental ultraviolet photoemission spectroscopy (UPS) both filled empty surface states together with tight‐binding calculations. considered several different types structural models, including relaxation model in which Ga atoms move into, As out of, by an amount such that plane through nearest‐neighbor makes a tilt angle, ϑT, corresponding ideal while bond lengths remain constant. show this angle ϑT∠19° contrast ϑT∠35° as previously concluded from (LEED) low‐energy electron‐diffraction analysis adequately accounts for data. A description nature local s‐ p‐orbital densities dispersion relations is given model.