Method for forming tapered polysilicon plug and plug formed
作者： Kuo-Chang Wu
DOI:
关键词:
摘要: The present invention provides a method of forming tapered polysilicon contact plug having reduced dimensions beyond the normal resolution limit photolithographic by utilizing at least one sidewall spacer as mask in an anisotropic etching process oxide layer such that window can be formed for subsequent deposition heavily-doped plug.
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