Method of making a semiconductor device by forming a masking layer with a tapered etch profile
作者： Chih-I Wu , Jihperng Leu , Hyun-Mog Park
DOI:
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摘要: A method for making a semiconductor device is described. That includes forming sacrificial layer on substrate, then of photoresist the layer. After patterned, to form patterned that has first opening, part removed generate an etched second opening substantially smaller than opening.
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