作者: Arpan P. Mahorowala , Steven J. Holmes , Richard Stephan Wise , Katherina E. Babich , Dirk Pfeiffer
DOI:
关键词: Nanotechnology 、 Semiconductor device 、 Anti-reflective coating 、 Critical dimension 、 Materials science 、 Semiconductor 、 Lithography 、 Optoelectronics 、 Etching (microfabrication)
摘要: Techniques for semiconductor processing are provided. In one aspect, a method patterning or more features in device comprises the following step. At least critical dimension of is reduced during etching antireflective material. A lithographic structure also