Microscopic modeling of photoluminescence of strongly disordered semiconductors
作者： P. Bozsoki , M. Kira , W. Hoyer , T. Meier , I. Varga
DOI: 10.1016/J.JLUMIN.2006.02.005
关键词:
摘要: A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence strongly disordered semiconductors. The approach includes both diagonal disorder and many-body Coulomb interaction. As a case study, light emission correlated plasma investigated numerically one-dimensional two-band tight-binding model. band structure underlying system assumed correspond either direct or an indirect semiconductor. In particular, absorption spectra are computed various levels sample temperature determine thermodynamic relations, Stokes shift, radiative lifetime distribution.
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