Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature.

摘要: The photoluminescence (PL) of an ${\mathrm{In}}_{0.48}$${\mathrm{Ga}}_{0.52}$P/(${\mathrm{Al}}_{0.2}$${\mathrm{Ga}}_{0.8}$${)}_{0.52}$${\mathrm{In}}_{0.48}$P multiple-quantum-well sample composed wells various widths has been measured as a function temperature. presence LO-phonon replicas at low temperature for the largest well indicates that PL is dominated by localized excitons. This further confirmed variation peak energies and linewidths increased above 4.2 K. dependence integrated intensities shows major loss mechanism thermal activation electron-hole pairs out followed nonradiative recombination in barriers. experimental data substantiate proposition poor characteristics visible lasers caused carrier leakage relatively shallow wells.