Two-dimensional dopant profiling of ultrashallow junctions by electron holography
作者： Alexander E. Thesen , Bernhard G. Frost , David C. Joy
DOI: 10.1116/1.1523022
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摘要: Electron holography using a transmission electron microscope equipped with Moellenstedt biprism has emerged as viable technique for creating two-dimensional voltage maps of semiconductor devices. We are presenting an introduction to this dopant profiling method. Practical details given on sample preparation, instrumentational considerations, and data interpretation.
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