In situ electron holographic analysis of biased Si n+ -p junctions
作者： Myung-Geun Han , David J. Smith , Martha R. McCartney
DOI: 10.1063/1.2908045
关键词: Molecular physics 、 Electrostatics 、 Electron 、 Silicon 、 Biasing 、 Materials science 、 Analytical chemistry 、 Electron holography 、 Electrode 、 Holography 、 Liquid junction potential
摘要: The two-dimensional electrostatic potential distribution across Si n+-p junctions over a range of positive and negative biasing conditions has been studied in situ using off-axis electron holography. A sample holder with movable probe as the electrode was used to bias focused-ion-beam-milled membranes during hologram acquisition. Reverse junction resulted an increase junction, whereas decreased forward eventually completely disappeared. trends experimental results matched reasonably well computer simulations.
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