Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering

摘要: Epitaxial stoichiometric (111)‐oriented TiN films have been grown on cleaved MgO by dc reactive magnetron sputtering from pure Ti targets at substrate temperatures Ts ranging 525–800 °C. The were in mixed Ar/N2 discharges with the total pressure maintained constant 3.5 mTorr (0.47 Pa). For Ts≲600 °C, N2 partial pressures PN2 that either below or above a narrow range of values, which depended upon Ts, resulted under‐ over‐stoichiometric films, respectively. However, Ts≳600 °C, could be obtained any PN2, including N2, greater than critical varied 0.2 to 0.4 (27 53 mPa) as was increased 600 800 °C. Vickers hardness H, room temperature resistivity ρ, and coefficient TCR single crystals found essentially independent PN2. H determined 2300±200 kg mm−2, about 15% higher for bulk sintered TiN, ρ 18 μΩ cm, measured between 100 400 K 6200 K−1. latter two results represent lowest highest respectively, yet reported films. electron carrier concentration mobility Hall measurements 5×1022 cm−3 6.7 cm2 V−1 s−1.