Hg ION implantation in silicon: Lattice disorder created and hg atom lattice location
作者： G. Della Mea , A. V. Drigo , P. Mazzoldi , G. Nardelli , R. Zannoni
DOI: 10.1080/00337577008236283
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摘要: Abstract The lattice disorder produced by 42-keV and 75-keV Hg ions implanted in Silicon at room temperature the location of atoms were studied means channeling technique with a 2.0 MeV 4He+ beam. damage was found to increase linearly ion dose until saturation value, connected range, is reached. number Si displaced for evaluated compared theoretical expectation. substitutional fraction produced: replacement mechanism discussed.
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