Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors

摘要: A new general principle is described which provides a simple and direct method for predicting the spatial distribution of energy absorbed in nuclear collisions, especially atomic displacement processes, heavy ion bombarded semiconductor materials. To calculate transfer rate into displacements, an function incident ions at arbitrary penetration depth derived integrated together with weight made from total cross section production displaced atoms average corresponding to those encounters can displace substrate Numerical data obtained each procedure are presented compared results revealed by many theoretical experimental works attempted up present. The number knock-on produced associated knock-ons calculated unique manner. Problems vacancy amorphization criterion...