Effects of straggling of incident ions on plasma-induced damage creation in “fin”-type field-effect transistors

摘要: We investigated the plasma-induced physical damage (PPD) mechanism in a field-effect transistor (FET) with fin-type channel, called FinFET. Compared to PPD planar metal–oxide–semiconductor transistors (MOSFETs), such as Si loss or recess formed by energetic ion bombardment during plasma processing followed subsequent wet-etch stripping, it was predicted that FinFETs are generated primarily stochastic process straggling of incident ions. During etching fin structure FinFET, an impinging penetrates into crystalline region be etched, not only vertical direction but also lateral direction, resulting sidewall region, is, bulk fin. The layer generation modeled on basis range theory. A molecular dynamics simulation performed for noble and halogen species impacting verify proposed mechanism. calculated results showed ions lighter masses higher energies induced larger amount owing nature phenomena. It should noted may lead latent defect sites channel hence operating speed degradation, which is problematic concern high-performance FinFETs.