Effects of compositional grading on GaAs–Ga1−xAlxAs interface and quantum well electronic structure

摘要: The electronic structure of the abrupt GaAs–Ga1−xAlxAs (001) heterojunction is compared with that in which transition from GaAs to occurs over several atomic layers across interface. effects varying width compositionally graded region on interfacial boundary conditions and quantum well energy levels are studied using tight‐binding method. compositional grading modeled virtual crystal approximation. Substantial shifts energies found. For example, ground state for a 15 central bounded by AlAs increases 30% widths six alloy layers. wave function at interface expanding it terms bulk states complex vector values. relative contribution neighborhood Γ X points typical conduction band determined. It found tha...