Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD GaAsGaAlAs multiple quantum wells
作者： S.H. Pan , H. Shen , Z. Hang , Fred H. Pollak , T.F. Kuech
DOI: 10.1016/0749-6036(88)90247-9
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摘要: Abstract We have performed a systematic study of photoreflectance (PR), Raman scattering (RS), low temperature photoluminescence (PL) and transmission electron microscopy (TEM) on quantum wells (MQWs) grown by metal-organic chemical vapor deposition (MOCVD) with nominal well (L Z )/barrier B ) widths 100A/100A 200A/200A. The large number features observed in the PR spectra at 135K 77K, combined theoretical calculation using Bastard model enable us to characterize structure MQWs, i.e., L , barrier height. values height agrees determination. In contrast calculation, fundamental heavy-hole valence conduction subband transitions both samples occur somewhat higher energies PL. This apparent discrepancy suggests that GaAs been contaminated about 1% mole fraction Al. is confirmed RS results also indicated growth conditions.
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