作者: L. V. Zorina , S. S. Khasanov , B. Zh. Narymbetov , R. P. Shibaeva , A. I. Kotov
DOI: 10.1134/1.1358397
关键词:
摘要: A new radical cation salt based on bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) with the tetrahedral anion GaCl 4 − , namely, (BEDT-TTF)4(GaCl4)2 · C6H5CH3, has been synthesized. The crystal structure of this is determined by X-ray diffraction analysis [a = 31.757(2) A, b 6.8063(3) c 34.879(2) β 90.453(4)°, V 7538.8(7) A3, space group I2/c, and Z 4]. In structure, layers alternate along c-axis. consist tetrahedra solvent molecules. packing BEDT-TTF molecules in layer differs from that known (BEDT-TTF)2GaCl4, even though both compounds exhibit semiconductor properties.