Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture
作者： J. T. Leonard , B. P. Yonkee , D. A. Cohen , L. Megalini , S. Lee
DOI: 10.1063/1.4940380
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摘要: We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside aperture area, defined by an opaque metal mask. This (PECA) creates air-gap in passive area of device, allowing one achieve efficient electrical confinement within aperture, while simultaneously achieving large index contrast between core device (the MQW aperture) and cladding formed etch), leading strong confinement. Scanning electron microscopy focused ion-beam analysis investigate precision technique defining fabricated single mode PECA VCSEL shows threshold current density ∼22 kA/cm2 (25 mA), peak output power ∼180 μW, at emission wavelength 417 nm. near-field p...
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