High rate deposition of ZnO thin films by a small-scale inductively coupled argon plasma generated in open air

摘要: Linear transparent ZnO films were deposited using a millimetre sized inductively coupled argon plasma at atmospheric pressure in open air. Increasing the substrate temperature enabled high growth rates between 200 and 1 µm s−1 to be obtained. The optical transmission of obtained is above 80% visible roughness had value 15 nm. Plasma gas temperatures estimated from rotational N2 assessed by emission spectroscopy suggest values up approximately 1800 K. detected species zinc radicals, but no ions. rate attributed rapid melting sputtering metallic source filament, produced being carried surface gas. High as well scanning are considered crucial formation transparent, dense films, first promoting migration second permitting regulation flux oxygen surface.