Polycide fuse with reduced programming time
作者： Chun Jiang , Stewart Logie , Sunil Mehta
DOI:
关键词:
摘要: In one embodiment, a polycide fuse is provided that includes: polysilicon layer; silicide layer formed on the and silicon nitride by RTCVD, having relatively low hydrogen concentration mechanical stress.
lens.org 参考文章(14)
Martin L. Voogel, Kameswara K. Rao, One-time programmable poly-fuse circuit for implementing non-volatile functions in a standard sub 0.35 micron CMOS ,(2000)
Yu Sun, Jean Yee-Mei Yang, Emmanuel H. Lingunis, Mark Ramsbey, Yider Wu, Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory ,(2001)
Shu-Chi Hung, Shulan Ying, Method for etching fuse windows in IC devices and devices made ,(1999)
Gurtej Singh Sandhu, Kunal R. Parekh, Thomas R. Glass, Zhiping Yin, Mark Fischer, Use of DAR coating to modulate the efficiency of laser fuse blows ,(2005)
Minesh Amrat Patel, Michael Scott Carroll, Peyman Sana, Yi Ma, Silicon-rich low thermal budget silicon nitride for integrated circuits ,(2002)
Donna K. Johnson, Glen L. Miles, Arne W. Ballantine, Structure and method for formation of a blocked silicide resistor ,(2003)
Ruggero Castagnetti, Ramnath Venkatraman, Yauh-Ching Liu, Fuse construction for integrated circuit structure having low dielectric constant dielectric material ,(2003)
Kevin T. Look, Low voltage non-volatile memory cell ,(2003)
Navakanta Bhat, Ping Chen, Paul G. Y. Tsui, Hsing-Huang Tseng, Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region ,(1998)
Yao-Wen Chang, Kent Kuohua Chang, Method of fabricating a nitride read-only-memory cell vertical structure ,(2001)