Hot-carrier energy-loss rates in GaAs/AlxGa1−xAs quantum wells
作者： K. Leo , W. W. Rühle , K. Ploog
关键词:
摘要: We present a systematic study of the cooling hot carriers in undoped, n-type doped, and p-type doped GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells different well widths by time-resolved luminescence spectroscopy. The energy loss due to interaction with optical phonons is independent dimensionality width. electrons highly reduced at all excitation densities compared simple theory interactions; for holes, comes close low density. reduction energy-loss rate optical-phonon scattering cannot be explained screening or degeneracy but rather consistent hot-phonon effect. deformation-potential acoustical increases decreasing
harvard.edu
osti.gov
sci-hub.se 参考文章(40)
C.H. Yang, S.A. Lyon, Thermalization of hot electrons in quantum wells Physica B+C. ,vol. 134, pp. 305- 308 ,(1985) , 10.1016/0378-4363(85)90360-2
F A Riddoch, B K Ridley, On the scattering of electrons by polar optical phonons in quasi-2D quantum wells Journal of Physics C: Solid State Physics. ,vol. 16, pp. 6971- 6982 ,(1983) , 10.1088/0022-3719/16/36/012
W. Cai, M. Marchetti, M. Lax, Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctions. Physical Review B. ,vol. 35, pp. 1369- 1372 ,(1987) , 10.1103/PHYSREVB.35.1369
P. Lugli, S. M. Goodnick, Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells. Physical Review Letters. ,vol. 59, pp. 716- 719 ,(1987) , 10.1103/PHYSREVLETT.59.716
Peter J. Price, Hot phonon effects in heterolayers Physica B+C. ,vol. 134, pp. 164- 168 ,(1985) , 10.1016/0378-4363(85)90337-7
C.V. Shank, R.L. Fork, R. Yen, J. Shah, B.I. Greene, A.C. Gossard, C. Weisbuch, Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structures Solid State Communications. ,vol. 47, pp. 981- 983 ,(1983) , 10.1016/0038-1098(83)90982-1
Z. Y. Xu, C. L. Tang, Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs-AlGaAs multiple quantum wells Applied Physics Letters. ,vol. 44, pp. 692- 694 ,(1984) , 10.1063/1.94880
J. F. Ryan, R. A. Taylor, A. J. Turberfield, Angela Maciel, J. M. Worlock, A. C. Gossard, W. Wiegmann, Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures Physical Review Letters. ,vol. 53, pp. 1841- 1844 ,(1984) , 10.1103/PHYSREVLETT.53.1841
Jagdeep Shah, A. Pinczuk, A. C. Gossard, W. Wiegmann, Energy-loss rates for hot electrons and holes in GaAs quantum wells Physical Review Letters. ,vol. 54, pp. 2045- 2048 ,(1985) , 10.1103/PHYSREVLETT.54.2045
C. H. Yang, Jean M. Carlson-Swindle, S. A. Lyon, J. M. Worlock, Hot-Electron Relaxation in GaAs Quantum Wells Physical Review Letters. ,vol. 55, pp. 2359- 2361 ,(1985) , 10.1103/PHYSREVLETT.55.2359