Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures
作者： Renjie Chen , Shadi A. Dayeh
DOI: 10.1021/ACS.NANOLETT.5B00327
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摘要: The rapid development of ultrascaled III–V compound semiconductor devices urges the detailed investigation metal–semiconductor contacts at nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report first study on solid-state reaction between metal (Ni) ternary (In0.53Ga0.47As) nanochannels to reveal kinetics, formed structure, interfacial properties. We observe a size-dependent Ni surface diffusion kinetic process that gradually departs volume as Fin width increases, properly depicted with our Fin-specific growth model. relationship was found be Ni4InGaAs2 (0001) ∥ In0.53Ga0.47As (111) single whose [0001] axis exhibit peculiar rotation away from nickelide/InGaAs interface due energy minimization. This crystalline is responsible for introducing uniaxial height ...
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