Influence of oval defects on transport properties in high-mobility two-dimensional electron gases

摘要: Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause negative magnetoresistance. On the basis of this, we show that number oval seen on material surface is comparable with density determined from We examine several materials different densities nS which were grown in one cycle under same conditions verify our observations. Paradoxically, largest has also highest mobility.