Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods.

摘要: Abstract Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array nanorods plasmonic back-reflectors nano-semi sphere was proposed. In this structure, single-layer graphene sheet placed on vertical InP to form Schottky junction. The electromagnetic field determined using solving three-dimensional Maxwell's equations discretized by finite difference method (FDM). enhancement light trapping in absorbing layer illustrated, thereby increasing short circuit current maximum value 31.57 mA/cm 2 having radius 400 nm, height 1250 nm, 50 nm, under irradiation AM1.5G. ultimate efficiency be 45.8% for an angle incidence 60°. This structure has shown very good ability when ITO layers were used at top as back-reflector proposed photonic crystal nanorods. Thence, improves short-circuit density 12% 2.7%, respectively, comparison InP-nanowire cells.