Graphene/InP Schottky junction near-infrared photodetectors

摘要: Graphene and P-type indium phosphide (P-InP) could be combined by van der Waals forces to form a Schottky junction, which can applied in photodetection. This study reported graphene/P-InP junction near-infrared photodetector with 3-nm-thick $${\text{Al}}_{2} {\text{O}}_{3}$$ passivation layer investigated the photoelectric characteristics of such device. As result, had barrier 0.89 eV. Besides, this device significant response wavelength 808 nm light responsivity detectivity up 5.2 mA/W $$1.3 \times 10^{10} \;{\text{cm Hz}}^{1/2} \;{\text{W}}^{ - 1}$$ , respectively, under reverse bias voltage 0.4 V. It is expected that Graphene/P-InP an may play vital role field optoelectronic devices future.