Photoresist ash process with reduced inter-level dielectric ( ILD) damage

摘要: Novel interconnect structures possessing an organosilicate dielectric material with unaltered physical and chemical properties post exposure to a specific resist ash chemistry for use in semiconductor devices are provided herein. The novel structure is capable of delivering improved device performance, functionality reliability owing the chemically physically “friendly” process. An situ inert gas/H 2 process achieves minimal reactivity sidewalls during ashing its inherent make up.