Optical beam induced current microscopy at DC and radiofrequency
作者： Fu-Jen Kao , Jian-Cheng Chen , Sheng-Lung Huang
DOI: 10.1109/CLEOPR.2003.1274554
关键词:
摘要: In this paper we have made a comparison of optical beam induced current (OBIC) imaging with DC and radiofrequency (RF) contrast on photodetector. The RF contrasts are generated by cw argon-krypton ion laser mode-locked Ti:sapphire laser, respectively. We found that OBIC mapping at would allow profiling the device's spatial distribution temporal response. Thus use pulsed in contribute one more dimension semiconductor device metrology.
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