High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector
作者： Yi-Jen Chiu , S.B. Fleischer , J.E. Bowers
DOI: 10.1109/68.681301
关键词:
摘要: We report a novel type of p-i-n traveling-wave photodetector utilizing low-temperature-grown GaAs (LTG-GaAs). The devices show record impulse response time (530-fs fullwidth at half-maximum, /spl sim/560 GHz -3-dB bandwidth) which agrees with theoretical estimates. effects various limiting factors on the device performance were analyzed theoretically and compared measurements obtained by electrooptic characterization our devices. Calculations indicate that speed is dominated short carrier lifetime. DC external quantum efficiencies as high 8% obtained.
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