作者: Nawazish A. Khan , Safeer Hussain
DOI: 10.1007/S10948-010-0779-8
关键词:
摘要: In the inner CuO2 planes (IP) of (Cu0.5Tl0.5)Ba2 Ca2Cu3O10−δ superconductors density carriers is in under-doped state which promotes enhancement anti-ferromagnetism. Consequently, critical temperature final compound suppressed. present studies, we have enhanced mobile in- ner by doping K at charge reservoir layer preparing (Cu0.5Tl0.5−xKx)Ba2Ca2Cu3O10−δ supercon- ductors. The higher increases Fermi velocity VF, and hence enhances superconductiv- ity parameters such as Tc, Hc, Jc. main objective these experiments was to suppress anti-ferromagnetism compound. We inter-plane coupling partially substituting Be Mg Ca sites. melting point compounds significantly re- duced with incorporation Mg. incorpora- tion elements has been found facilitate forma- numbers planes, i.e., (Cu0.5Tl0.5−xKx)Ba2Ca3−yMyCu4O12−δ.