Photoelectron bremsstrahlung spectrum in synchrotron radiation excited total reflection x-ray fluorescence analysis of silicon wafers

摘要: When synchrotron radiation is used as an excitation source, the total reflection x-ray fluorescence analysis of surface contamination on silicon wafer has extremely low background intensity that determines minimum detection limit. In this article, spectrum originating from photoelectron bremsstrahlung calculated using Monte Carlo method. The doubly differential electron cross sections obtained Born approximation modified by Elwert factor and with use form approach for screening are instead empirical formulas. addition to produced wafer, photoelectrons, which escape produce in filter attached detector also accordance usual excited experimental conditions. spectra compared with...