Plasma amplified photoelectron process endpoint detection apparatus

摘要: A plasma processing apparatus and process endpoint detection method including a chamber for an item that has first portion of material second material, with the materials having different work functions, structure generating in chamber, at least pair RF-power electrodes one them being excited by RF excitation frequency. The further includes ejecting electrons from only when is exposed to plasma, increasing energies these generated accelerating into etching sufficient energy generate secondary plasma. receiving discharge voltage signal, filtering electrical signal remove frequency any DC components therein, amplifying natural frequencies decay perturbation thereby detect endpoint. In preferred embodiment, electron electrode sheath, within this sheath accelerate directing beam photons selected range onto be processed, which not eject photoelectrons but high enough areas material.