Effect of hydrogen on high resitivity p-type CdTe
作者： S. Mergui , M. Hage-Ali , J.M. Koebel , P. Siffert
DOI: 10.1016/0168-9002(92)91202-K
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摘要: Abstract Annealing under hydrogen atmosphere has been investigated to define the optimal temperature and duration of this treatment on high resistivity THM grown p-type CdTe. A around 100–150°C for several hours improves characteristics nuclear radiation detectors. The effects polarization, which appear in halogen compensated material with aluminium contacts, evaluated. This annealing compared other techniques used introduce by ion implantation at low energy. physical introduction have current-voltage (I–V) thermally stimulated current measurements (TSC), as well giving mobility lifetime products (μτ), rise time distribution trapping effects. Thermal treatments CdTe different atmospheres such air, argon vacuum were hydrogen, order understand effect molecular
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