Amorphous contact layers on (Cd,Mn)Te crystals
作者： M. Witkowska-Baran , A. Mycielski , D. Kochanowska , B. Witkowska , W. Kaliszek
DOI: 10.1016/J.JCRYSGRO.2011.01.001
关键词:
摘要: The communication describes our research on a technique of making electrical contacts to semiinsulating (Cd,Mn)Te crystals for radiation detector applications. Since the made by deposition Au directly onto surface turned out be unreproducible, and monocrystalline layers heavily doped semiconductors were unpractical applications, investigations focused amorphous contact layers. ZnTe:Sb or CdTe:In evaporated "epi-ready" surfaces good-quality, high-resistivity (10 8 ―10 10 Ω cm) single (Cd,Mn)Te. evaporation was carried in medium-high vacuum about ―7 Torr. For connections covered an top layer. We investigated, effect thickness layer functioning contact. At moment 1 μm seems satisfactory.
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