High-Purity CdMnTe Radiation Detectors: A High-Resolution Spectroscopic Evaluation

摘要: The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to micron-scale resolution. CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce residual impurities in Mn source material, growth process incorporated five-times purification MnTe zone-refining method molten Te solvent. resulting 2.6 mm thick exhibited an electron mobility-lifetime product μnτn=2.9 × 10-3 cm2V-1. velocity drift calculated from rise time distribution preamplifier's output pulses each bias. mobility extracted electric field dependence and it has value μn=(950±90) cm2/Vs. High-resolution maps collection efficiency using scanning microbeam 5.5 MeV 4He2+ ions focused beam diameter <; 1 μm display large-area spatial uniformity. evolution uniformity across detector highlighted acquiring measurements applied biases ranging between 50 V 1100 V. Charge inhomogeneity associated presence bulk defects. It demonstrated that minimizing content material is highly effective achieving major improvements detector's performance as compared previous data.