作者: J.W. Howard , N.E. Islam , A.N. Ishaque , R.C. Block , M. Becker
DOI: 10.1109/23.101228
关键词:
摘要: 1- mu m technology GaAs MESFETs were exposed to a transient radiation environment at the Rensselaer Gaerttner linear accelerator laboratory and modeled by computer simulation using modified version of PISCES-IIB semiconductor device code TRIGSPICE circuit code. The tested in steady-state conditions, with short (20-ns) pulses on devices that had received prior dose gamma, neutron, or neutron-plus-gamma irradiation. Parasitic bipolar action was observed pulse testing unexposed devices. Previously unreported failure neutron preirradiated only. threshold for this is consistent level severity photocurrent parasitic transistor are explained basis physical mechanisms. >