Study and modeling of the impact of TID on the ATREE response in LM124 operational amplifier
作者： Fabien Roig , L. Dusseau , P. Ribeiro , G. Auriel , N. J-H. Roche
关键词: Operational amplifier 、 Computer science 、 Transient response 、 Integrated circuit 、 Amplifier 、 Transient radiation 、 Bipolar junction transistor 、 Electronics 、 Electronic engineering 、 Absorbed dose
摘要: Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact TID is investigated the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed ATREE responsesfrom produced by pulsed X-ray experiments. ASET laser mappings performed highlight sensitive transistors, explaining phenomena one manufacturer another one. modeling results presented using previously developed simulation tool. A good agreement between experimental responses and model outputs whatever level, prompt dose configuration device manufacturer.
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