Technique for Estimating Primary Photocurrents in Silicon Bipolar Transistors

摘要: It is often difficult to radiation-test the transistors of interest in initial phases a program involving radiation-hardened circuit design. As result, convenient way needed estimating primary photocurrents due gamma radiation which does not involve measuring or testing devices. A new method predicting photocurrent advanced makes it possible calculate Ipp from manufacturer's data sheets, making unnecessary have any measurements test performed.