Limitations of Ion Implantation in MOS Technology
作者： D. Widmann , U. Schwabe
DOI: 10.1007/978-3-642-69156-0_45
关键词:
摘要: Ion implantation has become a standard technique in advanced integrated circuit manufacturing. There are several unique features of ion compared to thermal dopant deposition. Most important is the excellent doping profile control over wide range doses. Moreover, compatible with most manufacturing steps for circuits, allowing applications which not possible
springer.com
sci-hub.st 参考文章(26)
Hideo Sunami, Mitsumasa Koyanagi, Selective Oxide Coating of Silicon Gate (SELOCS) Japanese Journal of Applied Physics. ,vol. 18, pp. 255- ,(1979) , 10.7567/JJAPS.18S1.255
H. J. Geipel, R. B. Shasteen, Implanted Source/Drain Junctions for Polysilicon Gate Technologies IBM Journal of Research and Development. ,vol. 24, pp. 362- 369 ,(1980) , 10.1147/RD.243.0362
T. Makino, H. Nakamura, The influence of plasma annealing on electrical properties of polycrystalline Si Applied Physics Letters. ,vol. 35, pp. 551- 552 ,(1979) , 10.1063/1.91175
E. F. Krimmel, H. Oppolzer, H. Runge, W. Wondrak, Kinetics of scanned electron beam annealing of high-energy as ion implanted silicon Physica Status Solidi (a). ,vol. 66, pp. 565- 571 ,(1981) , 10.1002/PSSA.2210660219
S. Ogura, P.J. Tsang, W.W. Walker, D.L. Critchlow, J.F. Shepard, Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor IEEE Transactions on Electron Devices. ,vol. 27, pp. 1359- 1367 ,(1980) , 10.1109/T-ED.1980.20040
T. I. Kamins, Resistivity of LPCVD Polycrystalline‐Silicon Films Journal of The Electrochemical Society. ,vol. 126, pp. 833- 837 ,(1979) , 10.1149/1.2129151
Hideki Matsumura, Seijiro Furukawa, Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation Japanese Journal of Applied Physics. ,vol. 14, pp. 1783- 1790 ,(1975) , 10.1143/JJAP.14.1783
A. K. Sinha, Refractory metal silicides for VLSI applications Journal of Vacuum Science and Technology. ,vol. 19, pp. 778- 785 ,(1981) , 10.1116/1.571148
G. Fuse, T. Hirao, K. Inoue, S. Takayanagi, Y. Yaegashi, Electrical properties of Si heavily implanted with boron molecular ions Journal of Applied Physics. ,vol. 53, pp. 3650- 3653 ,(1982) , 10.1063/1.331148
A. C. Adams, C. D. Capio, Planarization of Phosphorus‐Doped Silicon Dioxide Journal of The Electrochemical Society. ,vol. 128, pp. 423- 429 ,(1981) , 10.1149/1.2127434