Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor

摘要: The LDD structure, where narrow, self-aligned n-regions are introduced between the channel and n+source-drain diffusions of an IGFET to spread high field at drain pinchoff region thus reduce maximum intensity, is analyzed. design shown, including optimization n-dimensions concentrations boron doping profile evaluation effect series resistance on device transconductance. Characteristics experimental devices presented compared those conventional IGFET's. It shown that significant improvements in breakdown voltages, hot-electron effects, short-channel threshold effects can be achieved allowing operation higher voltage, e.g., 8.5 versus 5 V, with shorter source-drain spacings, 1.2 1.5 µm. Alternatively, a length could used for given supply voltage. Performance projections which predict 1.7 × basic device/circuit speed enhancement over structures. Due voltages frequency operation, performance results increase power must considered practical design.