Effect of Zr doping power on the electrical, optical and structural properties of In–Zr–O anodes for P3HT : PCBM thin-film organic solar cells
作者： Da-Young Cho , Kwun-Bum Chung , Seok-In Na , Han-Ki Kim
DOI: 10.1088/0022-3727/46/29/295305
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摘要: We investigated the effect of Zr doping power on electrical, optical, structural and morphological properties ZrO2 In2O3 co-sputtered In–Zr–O (IZrO) thin films as transparent anodes for bulk-heterojunction organic solar cells (OSCs). Increased led to increased resistivity as-deposited IZrO while decreased annealed at 500 °C. Regardless power, film showed a high optical transmittance in visible wavelength region near infrared (NIR) region. The optimized doped with 50 W radio frequency sheet resistance 20.71 Ω/square 83.9%, which is comparable value conventional In–Sn–O (ITO) films. electronic structures measured by spectroscopic ellipsometry indicated expansion unoccupied states conduction band power. OSCs exhibited similar performances reference ITO due Due their NIR region, are promising replacement absorbing OSCs.
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