Correlations between the electronic properties of doped indium oxide ceramics and the nature of the doping element
作者： S.J. Wen , G. Campet , J. Portier , G. Couturier , J.B. Goodenough
DOI: 10.1016/0921-5107(92)90339-B
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摘要: Abstract The electronic properties of indium oxide ceramics doped with germanium, tin, arsenic or silicon were investigated. A correlation between the “Lewis-acid strength” doping element and carrier mobility was established. Doping germanium allows a comparable maximum concentration sharply enhanced electron mobility; tin increases both mobility.
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