Oxidation kinetics of laser formed MoSi2 on polycrystalline silicon

摘要: Thin films of laser formed MoSi2 on polycrystalline silicon were oxidized in either dry or wet O2. These O2 at temperatures 808–1104 °C for times that ranged from 0.5–42 h, and 800° to 1000 °C 0.5–2 h. For both oxidation conditions, the growth SiO2 silicide surface is parabolic with time. Activation energies processes have been measured be 1.6 1.3 eV, respectively. As proceeds underlying decreases thickness, phase remains as MoSi2. However, upon complete consumption silicon, transforms Mo3Si.