Thermal oxidation of silicides
作者： L. N. Lie , W. A. Tiller , K. C. Saraswat
DOI: 10.1063/1.334212
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摘要: Kinetics of thermal oxide growth on silicides MoSi2, WSi2, TaSi2, and TiSi2 deposited over polycrystalline single‐crystal silicon were investigated. Both steam dry O2 oxidations in the temperature range 750–1200 °C examined. An oxidation kinetic model for which accounts diffusion processes through silicide layer oxidant growing oxide, interface chemical reaction was developed. This uses Deal–Grove approach. The significantly larger linear rate constants greatly reduced activation energies relation to are predicted by this model. similarity parabolic their is also excellent agreement with
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