Oxidation of the intermetallics Mosi2 and TiSi2 : A comparison
作者： S. Melsheimer , M. Fietzek , V. Kolarik , A. Rahmel , M. Schütze
DOI: 10.1007/BF01682375
关键词:
摘要: The oxidation behavior of two MoSi2 variants, one Mo-rich and Si-rich, TiSi2 was investigated between 1000 1400°C in air, oxygen an 80/20-Ar/O2 mixture. A protective SiO2 scale develops on all atmospheres the temperature range investigated. modification changes around 1300°C from tridymite to cristobalite. This change seems cause enhanced formation evaporation MoO3. grows at MoSi2-scale interface. In air a two-layer about 1200°C with inner inwards growing fine-grain mixture + TiO2 outer outward-growing partial layer. TiN transient is responsible for mixed layer because N -free matrix some Ti oxide precipitates inside formed. one-layer structure similar as that N-free atmosphere found T > 1200°C. grow needles mostly oriented perpendicular surface. Due faster transport compared SiO2, these act “oxygen pipes,” causing front needles. dissolves 1–2% TiO2. doping causes oxygenand Si consequence partly by outwards. cristobalite over entire
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