Compositional effect on the dielectric properties of high-k titanium silicate thin films deposited by means of a cosputtering process
作者： D. Brassard , D. K. Sarkar , M. A. El Khakani , L. Ouellet
DOI: 10.1116/1.2180267
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摘要: We report on the successful growth of high dielectric constant (high-k) titanium silicate TixSi1−xO2 thin films various compositions (0⩽x⩽1) at room temperature from cosputtering SiO2 and TiO2 targets. The developed process is shown to offer latitude required achieve not only a precise control film composition but an excellent morphology (i.e., dense with low roughness) as well. Fourier transform infrared x-ray photoelectron spectroscopy characterizations have evidenced presence Ti–O–Si type atomic environments, which fingerprint phase. are found exhibit properties very losses [tan(δ)<0.02] regardless their composition. increase content 4 (for pure films) 45 TiO2). On other hand, increasing also degrade significantly lea...
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