Active gate control for current balancing in parallel connected IGBT modules in solid state modulators

作者: D. Bortis , J. Biela , J.W. Kolar

DOI: 10.1109/PPPS.2007.4652431

关键词:

摘要: In modern pulsed power systems often fast solid state switches like MOSFETs and IGBT modules are used to generate short high pulses. order increase the power, have be connected in series or parallel. Depending on interconnection of switches, parameter variations system can lead an unbalanced voltage current. Therefore, generally derated, which results increased number required devices volume. With active gate control, derating preselection switching avoided. this paper control paralleled modules, has been developed for converters with inductive load, is explained detail adapted a modulator. There, focuses low inductance current measurement, unit implementation FPGA DSP, as well balancing pulse currents.

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