Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation.
作者： G. W. Trucks , Krishnan Raghavachari , G. S. Higashi , Y. J. Chabal
DOI: 10.1103/PHYSREVLETT.65.504
关键词:
摘要: Ab initio molecular-orbital theory is used to unravel the mechanism of HF etching leading to hydrogen-passivated silicon surfaces as observed experimentally. Total-energy calculations …
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sci-hub.se 参考文章(19)
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