METASTABILITIES AT THE Si-SiOx INTERFACE

摘要: ABSTRACT We summarize some of the results our investigation effects dangling/weaker and stronger bonds on electronic structure Si-SiO2 interface. These dangling give rise to a new type interfacial compensating charged state have an interesting dynamic character with implications for device characteristics. It is pointed out how these states can be severely modified by external perturbations when they are in contact e.g. p-channel inversion layer (IL) which could represent sensitive probe their nature distribution.