作者: M. Schlüter , James R. Chelikowsky , Steven G. Louie , Marvin L. Cohen
DOI: 10.1103/PHYSREVLETT.34.1385
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摘要: A recently developed method for the self-consistent calculation of localized configurations has been applied to Si(111) surface. Results have obtained unrelaxed, relaxed, and (2\ifmmode\times\else\texttimes\fi{}1) reconstructed (buckled) surfaces. Densities states charge densities are presented discussed. The salient experimental findings reproduced.