作者: Andrei A Muller , Alin Moldoveanu , Victor Asavei , Riyaz A Khadar , Esther Sanabria-Codesal
DOI: 10.1038/S41598-019-54600-5
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摘要: Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency new types sensors, terahertz and optoelectronic devices. Employing (RF) circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools fabrication processes. In this work, we develop use 3D Smith charts devices having complex frequency dependences, ones resulting using materials. The foundation chart involves here geometrical fundamental notions oriented curvature variable homothety in order to clarify first theoretical inconsistencies Foster Non circuits, where driving point impedances exhibit mixed clockwise counter-clockwise dependent (oriented) paths on increases. We show unique visualization capability chart, which allows quantify orientation over frequency. is applied joint complex-scalar multi-parameter modelling environment RF design exploiting report fabricated inductors record quality factors VO2 phase transition program multiple tuning states, operating range 4 GHz 10 GHz.